l l l l l l Logic Level Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax G HEXFET.

this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon .

Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating tempera.

IRL1404Z

IRL1404ZLPbF

IRL1404ZPbF

IRL1404ZS

IRL1404ZSPbF

IRL1404

IRL1404L

IRL1404LPBF

IRL1404PBF

IRL1404S

IRL1404SPBF

IRL1004

IRL1004L